Encapsulation film

ABSTRACT

Provided is an encapsulation film, an organic electronic device comprising the same, and a method for manufacturing an organic electronic device comprising the same. The encapsulation film comprises an encapsulation layer comprising a moisture adsorbent, and a metal mesh layer formed on the encapsulation layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a National Stage Application of InternationalApplication No. PCT/KR2019/010434 filed on Aug. 16, 2019, which claimsthe benefit of priority to Korean Patent Application No. 10-2018-0095580filed on Aug. 16, 2018, the disclosure of which is incorporated hereinby reference in its entirety.

TECHNICAL FIELD

The present application relates to an encapsulation film, an organicelectronic device comprising the same, and a manufacturing method of theorganic electronic device.

BACKGROUND ART

An organic electronic device (OED) means a device comprising an organicmaterial layer that generates alternating current of charges using holesand electrons, and an example thereof can include a photovoltaic device,a rectifier, a transmitter and an organic light emitting diode (OLED),and the like.

The organic light emitting diode (OLED) among the above organicelectronic devices has less power consumption and faster response speedthan existing light sources, and is advantageous for thinning of adisplay device or illumination. In addition, the OLED has spatialusability and thus is expected to be applied in various fields coveringvarious portable devices, monitors, notebooks, and TVs.

In commercialization and application expansion of the OLED, the mostimportant problem is a durability problem. Organic materials and metalelectrodes, and the like contained in the OLED are very easily oxidizedby external factors such as moisture. In addition, there is also aproblem that OLED bright spots occur by outgases that can occur insidethe OLED device. That is, products containing OLEDs are highly sensitiveto environmental factors. Accordingly, various methods have beenproposed in order to effectively block infiltration of oxygen ormoisture from the outside to the organic electronic device such as theOLED and to suppress outgases generated in the inside.

DISCLOSURE Technical Problem

The present application provides an encapsulation film which allowsforming a structure capable of blocking moisture or oxygen introducedinto an organic electronic device from the outside, is capable ofpreventing occurrence of bright spots of the organic electronic device,and has excellent cutting properties and heat dissipation.

Technical Solution

The present application relates to an encapsulation film. Theencapsulation film can be applied to sealing or encapsulating organicelectronic devices such as, for example, OLEDs.

In this specification, the term “organic electronic device” means anarticle or device having a structure comprising an organic materiallayer that generates alternating current of charges using holes andelectrons between a pair of electrodes facing each other, and an examplethereof can include, but is not limited to, a photovoltaic device, arectifier, a transmitter and an organic light emitting diode (OLED), andthe like. In one example of the present invention, the organicelectronic device can be an OLED.

As shown in FIG. 1, an exemplary encapsulation film (1) for an organicelectronic element comprises an encapsulation layer (10) including amoisture adsorbent and a metal mesh layer (11) formed on theencapsulation layer (10). In the present application, the metal meshlayer can mean a metal layer having a metal pattern. In the presentapplication, the metal mesh layer can comprise a metal pattern having aline width in a range of 1 to 50 mm, 3 to 48 mm, 7 to 43 mm, 12 to 38mm, 16 to 33 mm, or 21 to 29 mm. In addition, the metal pattern can havean area in a range of 5 to 50%, 8 to 37%, 12 to 33%, 15 to 29% or 18 to23%, relative to the total area of the metal mesh layer. In one example,the total area of the metal mesh layer can be substantially the same asthe area of one side of the film or the area of one side of theencapsulation layer, in consideration of the fact that the metal meshlayer and the encapsulation layer are provided as an integrated film.Here, substantially the same can have an error range in ±5%, ±3% or ±1%.By providing the encapsulation film, the present application effectivelytransmits outgases, which can occur inside the OLED device, through themetal mesh layer, thereby preventing the outgases from accumulatinginside the device and thus preventing the problem of generating OLEDbright spots. In addition, the encapsulation film of the presentapplication can effectively dissipate heat accumulated inside the OLED,and simultaneously has excellent cutting properties compared to theconventional encapsulation film including a metal foil, thereby beingcapable of improving processability and maintaining the rigiditythereof.

In this specification, the term “metal pattern” means a case that ametal material is included in a mesh-formed shape, where the mesh-formedshape includes patterns of an amorphous irregular shape as well as ashape such as a line, a square, a circle or an ellipse. In one aspect ofthe present application, the metal pattern can be patterned with themetal material in a line shape, and can be, preferably, patterned in acontinuous line shape. In the metal mesh layer, the other region exceptfor the region where the metal pattern is present can exist as emptyspace. In addition, the metal pattern and the empty space can be definedas the entire area of the metal mesh layer, where 5 to 50% of the entirearea described above can be the metal pattern.

In an embodiment of the present application, the metal mesh layer canhave a thermal conductivity of 50 W/m·K or more, 60 W/m·K or more, 70W/m·K or more, 80 W/m·K or more, 90 W/m·K or more, 100 W/m·K or more,110 W/m·K or more, 120 W/m·K or more, 130 W/m·K or more, 140 W/m·K ormore, 150 W/m·K or more, 200 W/m·K or more, or 210 W/m·K or more. Theupper limit of the thermal conductivity is not particularly limited,which can be 800 W/m·K or less. By having such a high thermalconductivity, the heat generated at the bonding interface upon the metalmesh layer bonding process can be released more quickly. Also, the heataccumulated during the operation of the organic electronic device israpidly released because of the high thermal conductivity, whereby thetemperature of the organic electronic device itself can be kept lower,and the occurrence of cracks and defects is reduced. The thermalconductivity can be measured at any temperature in the temperature rangeof 15 to 30° C. or about 25° C., which is room temperature.

The term “thermal conductivity” herein is a degree representingcapability in which a material is capable of transferring heat byconduction, where the unit can be expressed by W/m·K. The unitrepresents the degree to which the material transfers heat at the sametemperature and distance, which means a unit of heat (watt) to a unit ofdistance (meter) and a unit of temperature (Kelvin).

In an embodiment of the present application, the metal mesh layer of theencapsulation film can be transparent and opaque. The metal mesh layercan have a thickness in a range of 20 μm to 100 μm, 25 μm to 90 μm, 28μm to 85 μm, 30 μm to 80 μm, or 38 μm to 75 μm. The present applicationcan provide a thin film encapsulation film while realizing sufficientheat dissipation effects by controlling the thickness of the metal meshlayer. The metal mesh layer is not particularly limited as long as it isa material satisfying the above-described thermal conductivity andcontaining a metal. The metal mesh layer can comprise any one from ametal, a metal oxide, a metal nitride, a metal carbide, a metaloxynitride, a metal oxyboride, and a combination thereof. For example,the metal mesh layer can comprise an alloy in which one or more metalelements or nonmetal elements are added to one metal, and can comprise,for example, stainless steel (SUS). In addition, in one example, themetal mesh layer can comprise iron, chromium, copper, aluminum, nickel,iron oxide, chromium oxide, silicon oxide, aluminum oxide, titaniumoxide, indium oxide, tin oxide, indium tin oxide, tantalum oxide,zirconium oxide, niobium oxide and a combination thereof. The metal meshlayer can be deposited by means of electrolysis, rolling, thermalevaporation, electron beam evaporation, sputtering, reactive sputtering,chemical vapor deposition, plasma chemical vapor deposition or electroncyclotron resonance source plasma chemical vapor deposition. In oneexample of the present application, the metal mesh layer can bedeposited by reactive sputtering.

Conventionally, a nickel-iron alloy (Invar) was usually used as anencapsulation film, but the nickel-iron alloy has a disadvantage thatits price is high, its thermal conductivity is low, and its cuttingproperty is poor. The present application provides an encapsulation filmthat prevents generation of bright spots of organic electronic devicesand has excellent heat dissipation characteristics, without using thenickel-iron alloy as the metal mesh layer.

In an embodiment of the present application, the encapsulation layer ofthe encapsulation film can be at least two layers or more. Theencapsulation layer can encapsulate the entire surface of an organicelectronic element formed on a substrate. In one example, theencapsulation film can comprise a bright spot inhibitor. In oneembodiment, the encapsulation film comprises at least two encapsulationlayers, wherein upon encapsulating an organic electronic element, theencapsulation layer can comprise a first layer facing the organicelectronic element and a second layer not facing the organic electronicelement. In the above structure, the second layer can comprise a brightspot inhibitor having adsorption energy for outgases of 0 eV or less ascalculated by the density functional theory. The lower limit value ofthe adsorption energy is not particularly limited, but can be −20 eV.The type of the outgas is not particularly limited, but can include Hatoms, H₂ molecules and/or NH₃. As the encapsulation film comprises thebright spot inhibitor, the present application can block moistureintroduced into the organic electronic element and simultaneouslyprevent bright spots due to outgas occurring in the organic electronicdevice. In addition, as shown in FIG. 4, by comprising the bright spotinhibitor (14) in the second layer (102) not facing the organicelectronic element upon encapsulating the organic electronic element,the encapsulation film of the present application can prevent damage tothe organic electronic element according to stress concentration due tothe bright spot inhibitor (14). In view of the above, the first layer(101) may or may not comprise the bright spot inhibitor (14) in anamount of 15% or less based on the mass of the total bright spotinhibitor (14) in the encapsulation film (1). In addition, the layerthat does not contact the organic electronic element, excluding thefirst layer (101), can comprise 85% or more of the bright spot inhibitor(14) based on the mass of the total bright spot inhibitor (14) in theencapsulation film (1). That is, in the present application, the otherencapsulation layer (102) can comprise the bright spot inhibitor in ahigher amount, as compared with the first layer (101) facing the organicelectronic element upon encapsulating the organic electronic element,thereby preventing physical damage applied to the element whilerealizing while realizing moisture barrier properties and bright spotprevention properties of the film.

In an embodiment of the present application, the adsorption energybetween the bright spot inhibitor and the bright spot-causing atoms ormolecules can be calculated through electronic structure calculationbased on the density functional theory. The above calculation can beperformed by a method known in the art. For example, in the presentapplication, after making a two-dimensional slab structure in which theclosest packed filling surface of a bright spot inhibitor having acrystalline structure is exposed on the surface and then performingstructure optimization, and performing the structure optimization for astructure that the bright spot-causing molecules are adsorbed on thesurface of this vacuum state, the value obtained by subtracting thetotal energy of the bright spot-causing molecules from the total energydifference of these two systems was defined as the adsorption energy.For the total energy calculation about each system, a revised-PBEfunction as a function of GGA (generalized gradient approximation)series was used as exchange-correlation to simulate the interactionbetween electrons and electrons, the used cutoff of the electron kineticenergy was 500 eV and only the gamma point corresponding to the originof the reciprocal space was included and calculated. A conjugategradient method was used to optimize the atomic structure of each systemand iterative calculation was performed until the interatomic force was0.01 eV/A or less. A series of calculation was performed through VASP asa commercially available code.

The material of the bright spot inhibitor is not limited as long as thematerial is a material having the effect of preventing the bright spotson the panel of the organic electronic device when the encapsulationfilm is applied to the organic electronic device. For example, thebright spot inhibitor can be a material capable of adsorbing a materialexemplified by, for example, H₂ gas, ammonia (NH₃) gas, H⁺, NH²⁺, NHR₂or NH₂R as outgas generated from an inorganic deposition layer ofsilicon oxide, silicon nitride, or silicon oxynitride deposited on anelectrode of an organic electronic element. Here, R can be an organicgroup, and for example, can be exemplified by an alkyl group, an alkenylgroup, an alkynyl group and the like, but is not limited thereto.

In one example, the material of the bright spot inhibitor is not limitedas long as it satisfies the above adsorption energy value, which can bea metal or a non-metal. The bright spot inhibitor can comprise, forexample, Li, Ni, Ti, Rb, Be, Mg, Ca, Sr, Ba, Al, Zn, In, Pt, Pd, Fe, Cr,Si, or a combination thereof, can comprise an oxide or a nitride of thematerial, and can comprise an alloy of the material. In one example, thebright spot inhibitor can comprise nickel particles, nickel oxideparticles, titanium nitride, titanium-based alloy particles ofiron-titanium, manganese-based alloy particles of iron-manganese,magnesium-based alloy particles of magnesium-nickel, rare earth-basedalloy particles, zeolite particles, silica particles, carbon nanotubes,graphite, aluminophosphate molecular sieve particles or meso silicaparticles. In the encapsulation film, the bright spot inhibitor can becontained in an amount of 3 to 150 parts by weight, 6 to 143 parts byweight, 8 to 131 parts by weight, 9 to 123 parts by weight, 10 to 116parts by weight, 10 parts by weight to 95 parts by weight, 10 parts byweight to 50 parts by weight, or 10 parts by weight to 35 parts byweight, relative to 100 parts by weight of the resin component in theencapsulation layer. The present application can realize the bright spotprevention of the organic electronic device while improving adhesivenessand durability of the film in the above content range. In addition, thebright spot inhibitor can have a particle diameter in a range of 10 nmto 30 μm, 50 nm to 21 μm, 105 nm to 18 μm, 110 nm to 12 μm, 120 nm to 9μm, 140 nm to 4 μm, 150 nm to 2 μm, 180 nm to 900 nm, 230 nm to 700 nmor 270 nm to 550 nm. By comprising the bright spot inhibitor, thepresent application can realize moisture barrier properties andendurance reliability of the encapsulation film together whileefficiently adsorbing hydrogen generated in the organic electronicdevice. In this specification, the term resin component can be anencapsulation resin and/or a binder resin, which are described below.

As described above, the encapsulation layer can have two or moremulti-layered structures. When two or more layers constitute theencapsulation layer, the composition of each layer in the encapsulationlayer can be the same or different. In one example, the encapsulationlayer can comprise an encapsulation resin and/or a moisture adsorbent,and the encapsulation layer can be a pressure-sensitive adhesive layeror an adhesive layer.

In the encapsulation film of the present application, when theencapsulation layer has a three-layered structure, at least oneencapsulation layer can comprise a bright spot inhibitor and/or amoisture adsorbent. For example, the bright spot inhibitor and themoisture adsorbent can be contained in one encapsulation layer togetheror can be present in separate encapsulation layers, respectively.However, when the encapsulation film is applied on the organicelectronic element, the first layer, which is an encapsulation layerfacing the organic electronic element, may not comprise the bright spotinhibitor and the moisture adsorbent, or can also comprise a smallamount thereof, if any.

In an embodiment of the present invention, the encapsulation resin canhave a glass transition temperature of less than 0° C., less than −10°C., less than −30° C., less than −50° C., or less than −60° C. Here, theglass transition temperature can be a glass transition temperature aftercuring, and in one embodiment, it can mean a glass transitiontemperature after irradiation with ultraviolet light of about 1 J/cm² ormore, or a glass transition temperature after further performingthermosetting after ultraviolet irradiation.

In one example, the encapsulation resin can comprise a styrene resin orelastomer, a polyolefin resin or elastomer, other elastomers, apolyoxyalkylene resin or elastomer, a polyester resin or elastomer, apolyvinyl chloride resin or elastomer, a polycarbonate resin orelastomer, a polyphenylene sulfide resin or elastomer, a mixture ofhydrocarbons, a polyamide resin or elastomer, an acrylate resin orelastomer, an epoxy resin or elastomer, a silicone resin or elastomer, afluorine resin or elastomer or a mixture thereof, and the like.

Here, as the styrene resin or elastomer, for example,styrene-ethylene-butadiene-styrene block copolymer (SEBS),styrene-isoprene-styrene block copolymer (SIS),acrylonitrile-butadiene-styrene block copolymer (ABS),acrylonitrile-styrene-acrylate block copolymer (ASA),styrene-butadiene-styrene block copolymer (SBS), styrene homopolymer ora mixture thereof can be exemplified. As the olefin resin or elastomer,for example, a high density polyethylene resin or elastomer, a lowdensity polyethylene resin or elastomer, a polypropylene resin orelastomer or a mixture thereof can be exemplified. As the elastomer, forexample, an ester thermoplastic elastomer, an olefin elastomer, asilicone elastomer, an acrylic elastomer or a mixture thereof, and thelike can be used. In particular, as the olefin thermoplastic elastomer,a polybutadiene resin or elastomer or a polyisobutylene resin orelastomer, and the like can be used. As the polyoxyalkylene resin orelastomer, for example, a polyoxymethylene resin or elastomer, apolyoxyethylene resin or elastomer or a mixture thereof, and the likecan be exemplified. As the polyester resin or elastomer, for example, apolyethylene terephthalate resin or elastomer, a polybutyleneterephthalate resin or elastomer or a mixture thereof, and the like canbe exemplified. As the polyvinyl chloride resin or elastomer, forexample, polyvinylidene chloride and the like can be exemplified. As themixture of hydrocarbons, for example, hexatriacotane or paraffin, andthe like can be exemplified. As the polyamide resin or elastomer, forexample, nylon and the like can be exemplified. As the acrylate resin orelastomer, for example, polybutyl (meth)acrylate and the like can beexemplified. As the epoxy resin or elastomer, for example, bisphenoltypes such as bisphenol A type, bisphenol F type, bisphenol S type and ahydrogenated product thereof; novolak types such as phenol novolak typeor cresol novolak type; nitrogen-containing cyclic types such astriglycidyl isocyanurate type or hydantoin type; alicyclic types;aliphatic types; aromatic types such as naphthalene type and biphenyltype; glycidyl types such as glycidyl ether type, glycidyl amine typeand glycidyl ester type; dicyclo types such as dicyclopentadiene type;ester types; ether ester types or a mixture thereof, and the like can beexemplified. As the silicone resin or elastomer, for example,polydimethylsiloxane and the like can be exemplified. In addition, asthe fluororesin or elastomer, a polytrifluoroethylene resin orelastomer, a polytetrafluoroethylene resin or elastomer, apolychlorotrifluoroethylene resin or elastomer, apolyhexafluoropropylene resin or elastomer, polyfluorinated vinylidene,polyfluorinated vinyl, polyfluorinated ethylene propylene or a mixturethereof, and the like can be exemplified.

The resins or elastomers listed above can be also used, for example, bybeing grafted with maleic anhydride or the like, by being copolymerizedwith other resins or elastomers through monomers for producing resins orelastomers, and by being modified with other compounds. An example ofother compounds above can include carboxyl-terminalbutadiene-acrylonitrile copolymers and the like.

In one example, the encapsulation layer can comprise, but is not limitedto, the olefin elastomer, the silicone elastomer or the acrylicelastomer, and the like among the above-mentioned types as theencapsulation resin.

In one embodiment of the present invention, the encapsulation resin canbe an olefin resin. In one example, the olefin resin can be ahomopolymer of a butylene monomer, a copolymer obtained bycopolymerizing a butylene monomer and another polymerizable monomer; areactive oligomer using a butylene monomer, or a mixture thereof. Thebutylene monomer can include, for example, 1-butene, 2-butene orisobutylene.

Other monomers polymerizable with the butylene monomers or derivativescan include, for example, isoprene, styrene, or butadiene and the like.By using the copolymer, physical properties such as processability anddegree of cross-linking can be maintained and thus heat resistance ofthe adhesive itself can be secured when applied to organic electronicdevices.

In addition, the reactive oligomer using the butylene monomer cancomprise a butylene polymer having a reactive functional group. Theoligomer can have a weight average molecular weight ranging from 500 to5,000. Furthermore, the butylene polymer can be coupled to anotherpolymer having a reactive functional group. The other polymer can be,but is not limited to, alkyl (meth)acrylate. The reactive functionalgroup can be a hydroxy group, a carboxyl group, an isocyanate group or anitrogen-containing group. Also, the reactive oligomer and the otherpolymer can be cross-linked by a multifunctional cross-linking agent,and the multifunctional cross-linking agent can be at least one selectedfrom the group consisting of an isocyanate cross-linking agent, an epoxycross-linking agent, an aziridine cross-linking agent and a metalchelate cross-linking agent.

In one example, the encapsulation resin of the present application canbe a copolymer of a diene and an olefinic compound containing onecarbon-carbon double bond. Here, the olefinic compound can includebutylene or the like, and the diene can be a monomer capable ofpolymerizing with the olefinic compound, and can include, for example,isoprene or butadiene and the like. For example, the copolymer of anolefinic compound containing one carbon-carbon double bond and a dienecan be a butyl rubber.

In the encapsulation layer, the resin or elastomer component can have aweight average molecular weight (Mw) to an extent such that thepressure-sensitive adhesive composition can be formed into a film shape.For example, the resin or elastomer can have a weight average molecularweight of about 100,000 to 2,000,000, 120,000 to 1,500,000, or 150,000to 1,000,000 or so. The term weight average molecular weight hereinmeans a value converted to standard polystyrene measured by GPC (gelpermeation chromatograph). However, the resin or elastomer does notnecessarily have the above-mentioned weight average molecular weight.For example, in the case where the molecular weight of the resin orelastomer component is not in a level enough to form a film, a separatebinder resin can be blended into the pressure-sensitive adhesivecomposition.

In another embodiment, the encapsulation resin according to the presentapplication can be a curable resin. When the encapsulation resin is acurable resin, the encapsulation resin can be a resin having a glasstransition temperature of 85° C. or higher after curing. The glasstransition temperature can be a glass transition temperature afterphotocuring or thermosetting the encapsulation resin. The specific kindof the curable resin that can be used in the present invention is notparticularly limited, and for example, various thermosetting orphoto-curable resins known in this field can be used. The term“thermosetting resin” means a resin that can be cured through anappropriate heat application or aging process, and the term“photo-curable resin” means a resin that can be cured by irradiation ofelectromagnetic waves. Furthermore, the curable resin can be a dualcurable resin including both thermosetting and photocuring properties.

In the present application, the specific kind of the curable resin isnot particularly limited as long as it has the above-mentionedcharacteristics. For example, those which can be cured to exhibit anadhesive property can include a resin comprising one or more thermallycurable functional groups such as a glycidyl group, an isocyanate group,a hydroxy group, a carboxyl group or an amide group, or one or morefunctional groups capable of being cured by irradiation of anelectromagnetic wave such as an epoxide group, a cyclic ether group, asulfide group, an acetal group or a lactone group. Also, the specifickind of such a resin can include an acrylic resin, a polyester resin, anisocyanate resin or an epoxy resin, and the like, but is not limitedthereto.

In the present application, as the curable resin, aromatic or aliphatic;or linear or branched epoxy resins can be used. In one embodiment of thepresent invention, an epoxy resin having an epoxy equivalent of 180 g/eqto 1,000 g/eq, which contains two or more functional groups, can beused. By using the epoxy resin having an epoxy equivalent in the aboverange, characteristics such as adhesion performance and glass transitiontemperature of the cured product can be effectively maintained. Anexample of such an epoxy resin can include one or a mixture of two ormore of a cresol novolac epoxy resin, a bisphenol A type epoxy resin, abisphenol A type novolak epoxy resin, a phenol novolak epoxy resin, atetrafunctional epoxy resin, a biphenyl type epoxy resin, a triphenolmethane type epoxy resin, an alkyl-modified triphenol methane epoxyresin, a naphthalene type epoxy resin, a dicyclopentadiene type epoxyresin or a dicyclopentadiene-modified phenol type epoxy resin.

In the present application, as the curable resin, an epoxy resincomprising a cyclic structure in a molecular structure can be used, andan epoxy resin comprising an aromatic group (for example, a phenylgroup) can be used. When the epoxy resin comprises an aromatic group,the cured product has excellent thermal and chemical stability andsimultaneously exhibits a low moisture absorption amount, whereby thereliability of the organic electronic device encapsulation structure canbe improved. A specific example of the aromatic group-containing epoxyresin that can be used in the present invention can be one or a mixtureof two or more of a biphenyl type epoxy resin, a dicyclopentadiene typeepoxy resin, a naphthalene type epoxy resin, adicyclopentadiene-modified phenol type epoxy resin, a cresol-based epoxyresin, a bisphenol-based epoxy resin, a xylol-based epoxy resin, amultifunctional epoxy resin, a phenol novolak epoxy resin, a triphenolmethane type epoxy resin, and an alkyl-modified triphenol methane epoxyresin and the like, but is not limited thereto.

In addition, in one example, the encapsulation layer of the presentapplication can comprise an active energy ray polymerizable compoundwhich is highly compatible with the encapsulation resin and can form aspecific cross-linked structure together with the encapsulation resin.In this case, the encapsulation resin can be a cross-linkable resin.

For example, the encapsulation layer of the present application cancomprise, depending on the type of the encapsulation resin, amultifunctional active energy ray polymerizable compound that can bepolymerized by irradiation of an active energy ray together with theencapsulation resin. The active energy ray polymerizable compound canmean a compound comprising two or more functional groups capable ofparticipating in polymerization reaction by irradiation of an activeenergy ray, for example, functional groups containing an ethylenicallyunsaturated double bond such as an acryloyl group or a methacryloylgroup, or functional groups such as an epoxy group or an oxetane group.

As the multifunctional active energy ray polymerizable compound, forexample, a multifunctional acrylate (MFA) can be used.

Also, the active energy ray polymerizable compound can be included in anamount of 5 parts by weight to 30 parts by weight, 5 parts by weight to25 parts by weight, 8 parts by weight to 20 parts by weight, 10 parts byweight to 18 parts by weight or 12 parts by weight to 18 parts byweight, relative to 100 parts by weight of the encapsulation resin. Thepresent application provides an encapsulation film having excellentendurance reliability even under severe conditions such as hightemperature and high humidity in the above range.

The multifunctional active energy ray polymerizable compound which canbe polymerized by irradiation of the active energy ray can be usedwithout any limitation. For example, the compound can include1,4-butanediol di(meth)acrylate, 1,3-butylene glycol di(meth)acrylate,1,6-hexanediol di(meth)acrylate, 1,8-octanediol di(meth)acrylate,1,12-dodecanediol di(meth)acrylate, neopentylglycol di(meth)acrylate,dicyclopentanyl di(meth)acrylate, cyclohexane-1,4-diol di(meth)acrylate,tricyclodecanedimethanol (meth)diacrylate, dimethyloldicyclopentanedi(meth)acrylate, neopentylglycol-modified trimethylol propanedi(meth)acrylate, admantane di(meth)acrylate, trimethylolpropanetri(meth)acrylate, or a mixture thereof.

As the multifunctional active energy ray polymerizable compound, forexample, a compound having a molecular weight of less than 1,000 andcontaining two or more functional groups can be used. In this case, themolecular weight can mean a weight average molecular weight or a typicalmolecular weight. The ring structure included in the multifunctionalactive energy ray polymerizable compound can be any one of a carbocyclicstructure or a heterocyclic structure; or a monocyclic or polycyclicstructure.

In an embodiment of the present application, the encapsulation layer canfurther comprise a radical initiator. The radical initiator can be aphotoinitiator or a thermal initiator. The specific kind of thephotoinitiator can be appropriately selected in consideration of curingrate and yellowing possibility, and the like. For example,benzoin-based, hydroxy ketone-based, amino ketone-based or phosphineoxide-based photoinitiators, and the like can be used, and specifically,benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropylether, benzoin n-butyl ether, benzoin isobutyl ether, acetophenone,dimethylamino acetophenone, 2,2-dimethoxy-2-phenylacetophenone,2,2-diethoxy-2-phenylacetophenone,2-hydroxy-2-methyl-1-phenylpropan-1-one, 1-hydroxycyclohexylphenylketone, 2-methyl-1-[4-(methylthio)phenyl]-2-morpholino-propan-1-one,4-(2-hydroxyethoxy)phenyl-2-(hydroxy-2-propyl) ketone, benzophenone,p-phenylbenzophenone, 4,4′-diethylaminobenzophenone,dichlorobenzophenone, 2-methylanthraquinone, 2-ethylanthraquinone,2-t-butylanthraquinone, 2-aminoanthraquinone, 2-methylthioxanthone,2-ethylthioxanthone, 2-chlorothioxanthone, 2,4-dimethylthioxanthone,2,4-diethylthioxanthone, benzyl dimethyl ketal, acetophenone dimethylketal, p-dimethylaminobenzoic acid ester,oligo[2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]propanone] and2,4,6-trimethylbenzoyl-diphenyl-phosphine oxide, and the like can beused.

The radical initiator can be included in a ratio of 0.2 parts by weightto 20 parts by weight, 0.5 to 18 parts by weight, 1 to 15 parts byweight, or 2 parts by weight to 13 parts by weight, relative to 100parts by weight of the active energy ray polymerizable compound. As aresult, the reaction of the active energy ray polymerizable compound canbe effectively induced and deterioration of the physical properties ofthe encapsulation layer composition due to the residual components aftercuring can be also prevented.

In an embodiment of the present application, the encapsulation layer ofthe encapsulation film can further comprise a curing agent depending onthe kind of the resin component to be included. For example, it canfurther comprise a curing agent capable of reacting with theabove-mentioned encapsulation resin to form a cross-linked structure orthe like. In this specification, the term encapsulation resin and/orbinder resin can be used in the same sense as the resin component.

The kind of the curing agent can be appropriately selected and useddepending on the type of the resin component or the functional groupcontained in the resin.

In one example, when the resin component is an epoxy resin, the curingagent is a curing agent of the epoxy resin known in the art, and forexample, one or two or more of an amine curing agent, an imidazolecuring agent, a phenol curing agent, a phosphorus curing agent or anacid anhydride curing agent, and the like can be used, without beinglimited thereto.

In one example, as the curing agent, an imidazole compound which issolid at room temperature and has a melting point or a decompositiontemperature of 80° C. or higher can be used. As such a compound, forexample, 2-methylimidazole, 2-heptadecylimidazole, 2-phenylimidazole,2-phenyl-4-methylimidazole or 1-cyanoethyl-2-phenylimidazole, and thelike can be exemplified, but is not limited thereto.

The amount of the curing agent can be selected depending on compositionof the composition, for example, the type or ratio of the encapsulationresin. For example, the curing agent can be present in an amount from 1part by weight to 20 parts by weight, 1 part by weight to 10 parts byweight or 1 part by weight to 5 parts by weight, relative to 100 partsby weight of the resin component. However, the weight ratio can bechanged depending on the type and ratio of the encapsulation resin orthe functional group of the resin, or the cross-linking density to beimplemented, and the like.

When the resin component is a resin which can be cured by irradiation ofthe active energy ray, for example, a cationic photopolymerizationinitiator can be used as the initiator.

As the cationic photopolymerization initiator, ionized cationicinitiators of onium salt organometallic salt series, or nonionizedcationic photopolymerization initiators of organic silane or latentsulfonic acid series can be used. As the initiator of the onium saltseries, diaryliodonium salt, triarylsulfonium salt or aryldiazoniumsalt, and the like can be exemplified, as the initiator of theorganometallic salt series, iron arene and the like can be exemplified,as the initiator of the organosilane series, o-nitrobenzyl triaryl silylether, triaryl silyl peroxide or acyl silane, and the like can beexemplified, and as the initiator of the latent sulfuric acid series,α-sulfonyloxy ketone or α-hydroxymethylbenzoin sulfonate, and the likecan be exemplified, without being limited thereto.

In one example, as the cationic initiator, an ionized cationicphotopolymerization initiator can be used.

In one example, the encapsulation layer can further comprise atackifier, where the tackifier can be, preferably, a hydrogenated cyclicolefin polymer. As the tackifier, for example, a hydrogenated petroleumresin obtained by hydrogenating a petroleum resin can be used. Thehydrogenated petroleum resin can be partially or fully hydrogenated andcan be also a mixture of such resins. Such a tackifier can be selectedto have good compatibility with the pressure-sensitive adhesivecomposition, excellent moisture barrier property, and low organicvolatile components. A specific example of the hydrogenated petroleumresin can include a hydrogenated terpene resin, a hydrogenated esterresin or a hydrogenated dicyclopentadiene resin, and the like. Thetackifier can have a weight average molecular weight of about 200 to5,000. The amount of the tackifier can be appropriately adjusted asnecessary. For example, according to one example, the amount of thetackifier can be contained in a ratio of 5 parts by weight to 100 partsby weight, 8 to 95 parts by weight, 10 parts by weight to 93 parts byweight or 15 parts by weight to 90 parts by weight, relative to 100parts by weight of the resin component.

As described above, the encapsulation layer can comprise a moistureadsorbent. In this specification, the term “moisture adsorbent” can meana chemically reactive adsorbent capable of removing moisture orhumidity, for example, through chemical reaction with the moisture orhumidity that has penetrated the encapsulation film, as described below.

For example, the moisture adsorbent can be present in an evenlydispersed state in the encapsulation layer or the encapsulation film.Here, the evenly dispersed state can mean a state where the moistureadsorbent is present at the same or substantially the same density evenin any portion of the encapsulation layer or the encapsulation film. Themoisture adsorbent that can be used in the above can include, forexample, a metal oxide, a sulfate or an organometallic oxide, and thelike. Specifically, an example of the sulfate can include magnesiumsulfate, sodium sulfate or nickel sulfate, and the like, and an exampleof the organometallic oxide can include aluminum oxide octylate and thelike. Here, a specific example of the metal oxide can include phosphoruspentoxide (P₂O₅), lithium oxide (Li₂O), sodium oxide (Na₂O), bariumoxide (BaO), calcium oxide (CaO) or magnesium oxide (MgO), and the like,and an example of the metal salt can include a sulfate such as lithiumsulfate (Li₂SO₄), sodium sulfate (Na₂SO₄), calcium sulfate (CaSO₄),magnesium sulfate (MgSO₄), cobalt sulfate (CoSO₄), gallium sulfate(Ga₂(SO₄)₃), titanium sulfate (Ti(SO₄)₂) or nickel sulfate (NiSO₄), ametal halogenide such as calcium chloride (CaCl₂)), magnesium chloride(MgCl₂), strontium chloride (SrCl₂), yttrium chloride (YCl₃), copperchloride (CuCl₂), cesium fluoride (CsF), tantalum fluoride (TaF₅),niobium fluoride (NbF₅), lithium bromide (LiBr), calcium bromide(CaBr₂), cesium bromide (CeBr₃), selenium bromide (SeBr₄), vanadiumbromide (VBr₃), magnesium bromide (MgBr₂), barium iodide (BaI₂) ormagnesium iodide (MgI₂); or a metal chlorate such as barium perchlorate(Ba(ClO₄)₂) or magnesium perchlorate (Mg(ClO₄)₂), and the like, but isnot limited thereto. As the moisture adsorbent which can be contained inthe encapsulation layer, one or two or more of the above-mentionedconstitutions can be also used. In one example, when two or more areused as the moisture adsorbent, calcined dolomite and the like can beused.

Such a moisture adsorbent can be controlled to an appropriate sizedepending on applications. In one example, the average particle diameterof the moisture adsorbent can be controlled to 100 to 15000 nm, 500 nmto 10000 nm, 800 nm to 8000 nm, 1 μm to 7 μm, 2 μm to 5 μm, or 2.5 μm to4.5 μm. The moisture adsorbent having a size within the above range hasa reaction rate with moisture which is not too fast and thus is easy tostore, and may not damage the element to be encapsulated, andeffectively remove moisture, without interfering with the hydrogenadsorption process in relation to the bright spot inhibitor.Furthermore, in an embodiment of the present application, the ratio ofthe bright spot inhibitor particle diameter to the moisture adsorbentparticle diameter can be in a range of 0.01 to 1.5 or 0.1 to 0.95. Inthis specification, the particle diameter can mean an average particlediameter, and can be measured by a known method with a D50 particle sizeanalyzer. The present application can realize the moisture barrierproperty, which is the original function of the encapsulation film, andthe reliability of the element as well as the bright spot prevention, bycontrolling the particle diameter ratio of the bright spot inhibitor andthe moisture adsorbent present inside the film.

The amount of the moisture adsorbent is not particularly limited, whichcan be suitably selected in consideration of the desired blockingcharacteristics. In one example, the encapsulation film of the presentapplication can have a weight ratio of the bright spot inhibitor to themoisture adsorbent in a range of 0.05 to 0.8 or 0.1 to 0.7. In thepresent application, the bright spot inhibitor is dispersed in the filmin order to prevent the bright spots, but the bright spot inhibitoradded to prevent the bright spots can be included at a specific contentratio with the moisture adsorbent, considering the moisture barrierproperty, which is an inherent function of the encapsulation film, andthe reliability implementation of the element.

The encapsulation layer can also comprise a moisture blocker, ifdesired. In this specification, the term “moisture blocker” can mean amaterial which has free or low reactivity with moisture, but canphysically block or hinder movement of moisture or humidity within thefilm. As the moisture blocker, for example, one or two or more of clay,talc, needle-like silica, plate-like silica, porous silica, zeolite,titania or zirconia can be used. In addition, the moisture blocker canbe surface-treated with an organic modifier or the like to facilitatepenetration of organic substances. As such an organic modifier, forexample, dimethyl benzyl hydrogenated tallow quaternary ammonium,dimethyl hydrogenated tallow quaternary ammonium, methyl tallowbis-2-hydroxyethyl quaternary ammonium, dimethyl hydrogenated tallow2-ethylhexyl quaternary ammonium, dimethyl dehydrogenated tallowquaternary ammonium or a mixture thereof, and the like can be used.

The amount of the moisture blocker is not particularly limited and canbe suitably selected in consideration of the desired blockingcharacteristics.

In addition to the above-described constitutions, the encapsulationlayer can comprise various additives depending on applications and themanufacturing process of the encapsulation film to be described below.For example, the encapsulation layer can comprise a curable material, across-linking agent, a filler or the like in an appropriate range ofamount depending on the intended physical properties.

When the encapsulation layer is formed of two or more layers, as shownin FIG. 3, the second layer (102) which is not in contact with theorganic electronic element (which does not face the organic electronicelement upon encapsulating the organic electronic element) is formed cancomprise the moisture adsorbent (13). For example, when it is formed oftwo or more layers, the layer (101) in contact with the organicelectronic element among the encapsulation layer (10) can comprise nomoisture absorbent (13) or can comprise the moisture adsorbent in asmall amount of less than 5 parts by weight or less than 4 parts byweight relative to 100 parts by weight of the encapsulation resin.

Specifically, the amount of the moisture adsorbent can be controlled inconsideration of damage of the element and the like, considering thatthe encapsulation film is applied to the encapsulation of the organicelectronic element. For example, the first layer (101) contacting theelement can comprise a small amount of moisture adsorbent, or cancomprise no moisture adsorbent. In one example, the first layer (101) ofthe encapsulation layer (10) in contact with the element can comprise 0to 20% of moisture adsorbent relative to the total mass of the moistureadsorbent contained in the encapsulation film. In addition, theencapsulation layer (102) which does not contact the element cancomprise 80 to 100% of moisture adsorbent relative to the total mass ofthe moisture adsorbent contained in the encapsulation film.

In an embodiment of the present application, the encapsulation film (1)can further comprise a barrier layer (12) provided between theencapsulation layer (10) and the metal mesh layer (11), as shown in FIG.2. The barrier layer can comprise a polymer resin or a metal film. Thepolymer resin can comprise, for example, a cycloolefin polymer,polyethylene terephthalate, polytetrafluoroethylene, polyethylene,polypropylene, polybutene, polybutadiene, a vinyl chloride copolymer,polyurethane, ethylene-vinyl acetate, an ethylene-propylene copolymer,an ethylene-ethyl acrylate copolymer, an ethylene-methyl acrylatecopolymer or polyimide. The metal film can be the same as or differentfrom the material of the metal mesh layer as described above. Thebarrier layer serves to further improve the moisture barrier property ofthe encapsulation film.

The encapsulation film can further comprise a base film or a releasefilm (hereinafter, can be referred to as a “first film”), which can havea structure in which the encapsulation layer is formed on the base orrelease film. Also, the structure can further comprise a base or releasefilm (hereinafter, can be referred to as a “second film”) formed on themetal mesh layer, and the materials and thickness ranges of the firstfilm and the second film can be the same or different.

The specific kind of the first film that can be used in the presentapplication is not particularly limited. In the present application, forexample, a general polymer film in this field can be used as the firstfilm. In the present application, for example, as the base or releasefilm, a polyethylene terephthalate film, a polytetrafluoroethylene film,a polyethylene film, a polypropylene film, a polybutene film, apolybutadiene film, a polyvinyl chloride film, a polyurethane film, anethylene-vinyl acetate film, an ethylene-propylene copolymer film, anethylene-ethyl acrylate copolymer film, an ethylene-methyl acrylatecopolymer film or a polyimide film, and the like can be used. Inaddition, a suitable mold release treatment can be performed on one sideor both sides of the base film or release film of the presentapplication. As an example of the releasing agent used in the releasingtreatment of the base film, alkyd series, silicone series, fluorineseries, unsaturated ester series, polyolefin series or wax series, andthe like can be used, and among them, a releasing agent of alkyd series,silicone series or fluorine series is preferably used in terms of heatresistance, without being limited thereto.

In the present application, the thickness of the base film or releasefilm (first film) as above is not particularly limited, which can beappropriately selected depending on the application to which it isapplied. For example, in the present application, the thickness of thefirst film can be 10 μm to 500 preferably, 20 μm to 200 μm or so. If thethickness is less than 10 deformation of the base film can easily occurduring the manufacturing process, whereas if it exceeds 500 μm, theeconomic efficiency is low.

The thickness of the encapsulation layer included in the encapsulationfilm of the present application is not particularly limited, which canbe appropriately selected in accordance with the following conditions inconsideration of the application to which the film is applied. Thethickness of the encapsulation layer can be 5 μm to 200 preferably, 5 μmto 100 μm or so. The thickness of the encapsulation layer can be theentire thickness of the multi-layered encapsulation layer. If thethickness of the encapsulation layer is less than 5 sufficient moistureblocking ability cannot be exhibited, whereas if it exceeds 200 μm, itis difficult to secure processability, the thickness expansion due tomoisture reactivity is large, so that the deposited film of the organiclight emitting element can be damaged, and the economic efficiency islow.

The present application also relates to an organic electronic device. Asshown in FIG. 5, the organic electronic device can comprise a substrate(21); an organic electronic element (22) formed on the substrate (21);and the above-described encapsulation film (1) for encapsulating theorganic electronic element (22). The encapsulation film can encapsulatethe entire surface, for example, all the upper part and the sidesurface, of the organic electronic element formed on the substrate. Theencapsulation film can comprise an encapsulation layer containing apressure-sensitive adhesive composition or an adhesive composition in across-linked or cured state. Furthermore, the organic electronic devicecan be formed by encapsulating the encapsulation layer so as to contactthe entire surface of the organic electronic element formed on thesubstrate.

In an embodiment of the present application, the organic electronicelement can comprise a pair of electrodes, an organic layer containingat least a light emitting layer, and a passivation layer. Therefore, theabove-described encapsulation layer, that is, the first layer of theencapsulation layer can be in contact with the passivation layer.Specifically, the organic electronic element can comprise a firstelectrode layer, an organic layer formed on the first electrode layerand containing at least a light emitting layer, and a second electrodelayer formed on the organic layer, and can comprise a passivation layerfor protecting the electrode on the second electrode layer and theorganic layer. The first electrode layer can be a transparent electrodelayer or a reflective electrode layer, and the second electrode layercan also be a transparent electrode layer or a reflective electrodelayer. More specifically, the organic electronic element can comprise atransparent electrode layer formed on a substrate, an organic layerformed on the transparent electrode layer and containing at least alight emitting layer, and a reflective electrode layer formed on theorganic layer.

Here, the organic electronic element can be, for example, an organiclight emitting element.

The passivation layer can comprise an inorganic layer and an organiclayer. In one embodiment, the inorganic layer can be one or more metaloxides or nitrides selected from the group consisting of Al, Zr, Ti, Hf,Ta, In, Sn, Zn and Si. The inorganic layer can have a thickness of 0.01μm to 50 μm or 0.1 μm to 20 μm or 1 μm to 10 μm. In one example, theinorganic layer of the present application can be an inorganic materialcontaining no dopant, or can be an inorganic material containing adopant. The dopant which can be doped can be one or more elementsselected from the group consisting of Ga, Si, Ge, Al, Sn, Ge, B, In, Tl,Sc, V, Cr, Mn, Fe, Co and Ni, or an oxide of the element, but is notlimited thereto. The organic layer is distinguished from the organiclayer containing at least a light emitting layer in that it does notinclude a light emitting layer, and can be an organic deposition layercontaining an epoxy compound.

The inorganic layer or the organic layer can be formed by chemical vapordeposition (CVD). For example, as the inorganic layer, silicon nitride(SiNx) can be used. In one example, silicon nitride (SiNx) used as theinorganic layer can be deposited to a thickness of 0.01 μm to 50 μm. Inone example, the organic layer can have a thickness in a range of 2 μmto 20 μm, 2.5 μm to 15 μm, or 2.8 μm to 9 μm.

The present application also provides a method for manufacturing anorganic electronic device. The manufacturing method can comprise a stepof applying the above-described encapsulation film to a substrate, onwhich an organic electronic element is formed, so as to cover theorganic electronic element. In addition, the manufacturing method cancomprise a step of curing the encapsulation film. The curing step of theencapsulation film can mean curing of the encapsulation layer, which canproceed before or after the encapsulation film covers the organicelectronic element.

In this specification, the term “curing” can mean that thepressure-sensitive adhesive composition of the present invention forms across-linked structure through heating or UV irradiation processes, andthe like to be produced in the form of a pressure-sensitive adhesive.Alternatively, it can mean that the adhesive composition is solidifiedand attached as an adhesive.

Specifically, the organic electronic element can be formed by forming atransparent electrode on a glass or polymer film used as a substrate bya method such as vacuum evaporation or sputtering, forming a luminescentorganic material layer composed of, for example, a hole transportinglayer, a light emitting layer and an electron transporting layer, andthe like on the transparent electrode, and then further forming anelectrode layer thereon. Subsequently, the encapsulation layer of theencapsulation film is placed to cover the entire surface of the organicelectronic element of the substrate subjected to the above process.

Advantageous Effects

The encapsulation film of the present application can be applied tosealing or encapsulation of an organic electronic device such as anOLED. The film allows forming a structure capable of blocking moistureor oxygen introduced into an organic electronic device from the outside,and can prevent occurrence of bright spots of the organic electronicdevice.

BRIEF DESCRIPTION OF DRAWINGS

FIGS. 1 to 4 are cross-sectional views showing an encapsulation filmaccording to one example of the present application.

FIG. 5 is a cross-sectional view showing an organic electronic deviceaccording to one example of the present application.

EXPLANATION OF REFERENCE NUMERALS

-   -   1: encapsulation film    -   10: encapsulation layer    -   101: first layer    -   102: second layer    -   11: metal mesh layer    -   12: barrier layer    -   13: moisture adsorbent    -   14: bright spot inhibitor    -   21: substrate    -   22: organic electronic element

EXAMPLES

Hereinafter, the present invention will be described in more detailthrough examples according to the present invention and comparativeexamples not according to the present invention, but the scope of thepresent invention is not limited by the following examples.

Example 1

Production of Encapsulation Layer

To prepare a first layer solution, a solution (solid content 33%), inwhich 180 g of a butyl rubber resin and 60 g of a DCPD petroleum resinwere diluted with toluene, was prepared and then the solution washomogenized. 10 g of a multifunctional acrylate and 3 g ofphotoinitiator were introduced to the homogenized solution, homogenizedand then stirred at a high speed for 1 hour to prepare the first layersolution.

To prepare a second layer solution, a calcined dolomite solution wasprepared as a moisture adsorbent. Also, separately, a solution, in which140 g of a polyisobutylene resin (weight average molecular weight450,000) and 60 g of a hydrogenated dicyclopentadiene resin (softeningpoint 125° C.) as a tackifier were diluted with toluene, was prepared,and then the solution was homogenized. 10 g of a photocuring agent and15 g of a photoinitiator were introduced to the homogenized solution andhomogenized, and then 100 g of the moisture adsorbent solution wasintroduced thereto and then stirred at a high speed for 1 hour toprepare the second layer solution.

The above-prepared encapsulation layer solutions were applied to therelease surface of a releasing PET using a comma coater separately fromeach of the first layer and the second layer and dried in a dryer at130° C. for 3 minutes to form encapsulation layers each having athickness of 50 μm, and then two layers were laminated.

Production of Encapsulation Film

The release-treated PET attached to the second layer of theencapsulation layer was peeled off and the second layer of theencapsulation layer was laminated on the previously prepared metal meshlayer (aluminum mesh, thickness 70 μm, metal pattern area: 20%) at 70°C. by a roll-to-roll process to produce an encapsulation film such thatthe second layer was in contact with the metal mesh layer.

The produced encapsulation film was cut into a square sheet shape with aknife cutter through a wood-formed cutting machine to produce a film forencapsulating an organic electronic element.

Example 2

An encapsulation film was prepared in the same manner as in Example 1,except that upon producing the second layer solution, 50 g of Niparticles (particle diameter of about 500 nm) was additionallyintroduced thereto as a bright spot inhibitor.

Example 3

An encapsulation film was prepared in the same manner as in Example 2,except that the metal pattern area of the metal mesh layer was 70%.

Comparative Example 1

An encapsulation film was prepared in the same manner as in Example 1,except that an Al foil (thickness: 70 μm) was used instead of the metalmesh layer.

Experimental Example 1—Occurrence of Dark Spots or Bright Spots

After an organic electronic element was deposited on a glass substrate,the encapsulation films prepared in the examples and comparativeexamples were each laminated onto the element using a vacuum laminatorunder the conditions of 50° C., a vacuum degree of 50 mtorr and 0.4 MPato produce an organic electronic panel.

The above-produced panel was placed in a constant temperature andhumidity chamber at 85° C. and 85%, and stored. After 1000 hours, it wastaken out and turned on to check whether the bright spots are generatedor whether the element shrinks. It was classified as

when bright spots and element shrinkage did not occur, as O when brightspots and element shrinkage occurred very little, as A when bright spotsand element shrinkage occurred partly, and as X when bright spot defectsoccurred and element shrinkage occurred.

TABLE 1 Bright spot occurrence Example 1 O Example 2

Example 3 Δ Comparative Example 1 X

1. An encapsulation film for an organic electronic element, comprisingan encapsulation layer comprising a moisture adsorbent, and a metal meshlayer formed on the encapsulation layer.
 2. The encapsulation filmaccording to claim 1, wherein the metal mesh layer comprises a metalpattern having a line width in a range of 1 to 50 mm.
 3. Theencapsulation film according to claim 1, wherein the metal mesh layercomprises a metal pattern, and the metal pattern has an area in a rangeof 5 to 50% relative to the entire area of the metal mesh layer.
 4. Theencapsulation film according to claim 1, wherein the metal mesh layerhas a thickness in a range of 20 to 100 μm.
 5. The encapsulation filmaccording to claim 1, wherein the metal mesh layer has a thermalconductivity of 50 to 800 W/m·K.
 6. The encapsulation film according toclaim 1, wherein the encapsulation layer is at least two layers or more.7. The encapsulation film according to claim 6, wherein theencapsulation layer comprises a first layer configured to face anencapsulated organic electronic element and a second layer configured tonot face an encapsulated organic electronic element, wherein the secondlayer comprises a bright spot inhibitor having adsorption energy foroutgases of 0 eV or less as calculated by the density functional theory.8. The encapsulation film according to claim 7, wherein the outgascomprises H atoms, H₂ molecules, or NH₃.
 9. The encapsulation filmaccording to claim 7, wherein the first layer comprises the bright spotinhibitor in an amount of 15% or less based on the mass of the totalbright spot inhibitor in the encapsulation film.
 10. The encapsulationfilm according to claim 1, wherein the encapsulation layer comprises anencapsulation resin.
 11. The encapsulation film according to claim 1,wherein the moisture adsorbent comprises a chemically reactiveadsorbent.
 12. The encapsulation film according to claim 7, wherein theweight ratio of the bright spot inhibitor to the moisture adsorbent isin a range of 0.05 to 0.8.
 13. The encapsulation film according to claim1, wherein the moisture adsorbent has a particle diameter in a range of100 to 15000 nm.
 14. The encapsulation film according to claim 7,wherein the bright spot inhibitor has a particle diameter in a range of10 nm to 30 μm.
 15. The encapsulation film according to claim 1, furthercomprising a barrier layer provided between the encapsulation layer andthe metal mesh layer.
 16. The encapsulation film according to claim 15,wherein the barrier layer comprises a polymer resin or a metal film. 17.The encapsulation film according to claim 1, wherein the encapsulationlayer encapsulates the entire surface of the organic electronic elementformed on a substrate.
 18. An organic electronic device, comprising asubstrate, an organic electronic element formed on the substrate, andthe encapsulation film according to claim 1 encapsulating the organicelectronic element.
 19. The organic electronic device according to claim18, wherein the organic electronic element comprises a pair ofelectrodes, an organic layer containing a light emitting layer, and apassivation layer.
 20. A method for manufacturing an organic electronicdevice, comprising applying the encapsulation film according to claim 1to a substrate comprising an organic electronic element, so as to coverthe organic electronic element.